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Ship to all EU countries
30 days cooling-off period
1 jaar garantie
Description
The BS170 is an N-channel MOSFET, packaged in a compact TO-92 package. This type of MOSFET is ideal for use in low voltage and current circuits, such as small signal transistors.
Key Specifications:
Drain-Source Voltage (Vds): 60V
Gate-Source Voltage (Vgs): ±20V (continuous), ±40V (non-repetitive)
Drain Current (Id): 0.5A
Total Power Dissipation: 350 mW at 25°C
Operating Temperature: -55°C to +150°C
Gate Threshold Voltage (Vgs(Th)): 0.8V to 3.0V
On-Resistance (Rds(on)): Maximum 5 Ω at Vgs = 10V
Switching times: Turn-on and turn-off time of 4-10 nanoseconds
The BS170 offers excellent performance in high-speed switching applications due to low switching times and is suitable for use in small power controllers and signal amplifiers, among other things.
Key Specifications:
Drain-Source Voltage (Vds): 60V
Gate-Source Voltage (Vgs): ±20V (continuous), ±40V (non-repetitive)
Drain Current (Id): 0.5A
Total Power Dissipation: 350 mW at 25°C
Operating Temperature: -55°C to +150°C
Gate Threshold Voltage (Vgs(Th)): 0.8V to 3.0V
On-Resistance (Rds(on)): Maximum 5 Ω at Vgs = 10V
Switching times: Turn-on and turn-off time of 4-10 nanoseconds
The BS170 offers excellent performance in high-speed switching applications due to low switching times and is suitable for use in small power controllers and signal amplifiers, among other things.
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